MCH6630 no.8240-1/4 features ? low on-resistance. ? ultrahigh-speed switching. ? 1.5v drive. ? high resistance to damage from esd (typ 300v). [with a protection diode connected between the gate and source] ? composite type with 2 mosfets contained in a single package, facilitating high-density mounting. specifications absolute maximum ratings at ta=25 c parameter symbol conditions ratings unit drain-to-source voltage v dss 30 v gate-to-source voltage (*1) v gss 10 v drain current (dc) i d 0.7 a drain current (pulse) i dp pw 10 m s, duty cycle 1% 2.8 a allowable power dissipation p d mounted on a ceramic board (900mm 2 5 0.8mm) 1unit 0.8 w channel temperature tch 150 c storage temperature tstg --55 to +150 c ( * 1) : note, when designing a circuit using this product, that it has a gate (oxide film) protection diode connected only between its gate and source. electrical characteristics at ta=25 c ratings parameter symbol conditions min typ max unit drain-to-source breakdown voltage v (br)dss i d =1ma, v gs =0 30 v zero-gate voltage drain current i dss v ds =30v, v gs =0 1 m a gate-to-source leakage current i gss v gs =8v, v ds =0 1 m a cutoff voltage v gs (off) v ds =10v, i d =100 m a 0.4 1.3 v forward transfer admittance ? yfs ? v ds =10v, i d =350ma 0.45 0.8 s r ds (on)1 i d =350ma, v gs =4v 0.7 0.9 w static drain-to-source on-state resistance r ds (on)2 i d =200ma, v gs =2.5v 0.8 1.15 w r ds (on)3 i d =10ma, v gs =1.5v 1.6 2.4 w input capacitance ciss v ds =10v, f=1mhz 30 pf output capacitance coss v ds =10v, f=1mhz 7 pf reverse transfer capacitance crss v ds =10v, f=1mhz 3.5 pf marking : we continued on next page. sanyo electric co.,ltd. semiconductor company tokyo office tokyo bldg., 1-10, 1 chome, ueno, taito-ku, tokyo, 110-8534 japan ordering number : enn8240 31005pe ts im tb-00001332 any and all sanyo products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. consult with your sanyo representative nearest you before using any sanyo products described or contained herein in such applications. sanyo assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo products described or contained herein. MCH6630 n-channel silicon mosfet general-purpose switching device applications
MCH6630 no.8240-2/4 continued from preceding page. ratings parameter symbol conditions min typ max unit turn-on delay time t d (on) see specified test circuit. 8 ns rise time t r see specified test circuit. 6 ns turn-off delay time t d (off) see specified test circuit. 10 ns fall time t f see specified test circuit. 8 ns total gate charge qg v ds =10v, v gs =10v, i d =700ma 1 nc gate-to-source charge qgs v ds =10v, v gs =10v, i d =700ma 0.4 nc gate-to-drain miller charge qgd v ds =10v, v gs =10v, i d =700ma 0.2 nc diode forward voltage v sd i s =700ma, v gs =0 0.93 1.2 v package dimensions electrical connection unit : mm 2173a switching time test circuit 1 : source1 2 : gate1 3 : drain2 4 : source2 5 : gate2 6 : drain1 sanyo : mcph6 0.25 0.25 0.07 2.1 1.6 2.0 0.65 0.3 0.85 0.15 1 123 654 32 5 46 pw=10 m s d.c. 1% p. g 50 w g s d i d =350ma r l =42 w v dd =15v v out v in 4v 0v v in MCH6630 i d -- v ds it07510 i d -- v gs it07511 0.1 0.5 0 0.2 0 0 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 0.1 0.2 0.3 0.4 6.0v 4.0v 3.5v 3.0v 2.5v 2.0v v gs =1.5v 0.4 0.6 0.8 1.0 1.5 2.0 2.5 3.0 3.5 ta= --25 c --25 c 25 c 25 c ta=75 c 75 c v ds =10v drain-to-source voltage, v ds -- v drain current, i d -- a gate-to-source voltage, v gs -- v drain current, i d -- a 654 123 1 : source1 2 : gate1 3 : drain2 4 : source2 5 : gate2 6 : drain1 top view
MCH6630 no.8240-3/4 030 10 15 20 25 5 ciss, coss, crss -- v ds it09243 2 0.1 23 1.0 5 7 2 10 3 5 7 3 0 60 50 20 30 10 40 sw time -- i d it07516 it07515 i f -- v sd it07514 0.01 0.1 0.1 23 57 23 57 1.0 7 5 3 3 2 2 7 5 1.0 ? y fs ? -- i d 0.8 1.0 0.6 1.2 1.4 0.4 0.2 0.01 1.0 0.1 7 5 3 2 7 5 3 3 2 2 v ds =10v 25 c ta= --25 c 75 c v gs =0 --25 c 25 c v dd =15v v gs =4v t d (off) t f t d (on) t r crss coss ciss f=1mhz ta= 75 c 0 0 1.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 4.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 v gs -- qg it09244 r ds (on) -- i d 3 5 7 1.0 2 3 23 57 23 57 0.01 0.1 1.0 it07519 v ds =10v i d =0.7a ta= 75 c 25 c -- 25 c v gs =4v drain-to-source voltage, v ds -- v ciss, coss, crss -- pf drain current, i d -- a switching time, sw time -- ns total gate charge, qg -- nc gate-to-source voltage, v gs -- v forward transfer admittance, ? y fs ? -- s drain current, i d -- a diode forward voltage, v sd -- v forward current, i f -- a drain current, i d -- a static drain-to-source on-state resistance, r ds (on) -- w r ds (on) -- v gs it09241 r ds (on) -- ta it09242 1.0 0 1.0 0 2.0 3.0 4.0 5.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 ta=25 c i d =200ma 350ma --40 --60 --20 0 20 40 60 80 100 120 140 0.2 0 0.4 0.6 0.8 1.0 1.2 1.4 1.6 i d =200ma, v gs =2.5v i d =350ma, v gs =4.0v gate-to-source voltage, v gs -- v ambient temperature, ta -- c static drain-to-source on-state resistance, r ds (on) -- w static drain-to-source on-state resistance, r ds (on) -- w
MCH6630 no.8240-4/4 specifications of any and all sanyo products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. sanyo electric co., ltd. strives to supply high-quality high-reliability products. however, any and all semiconductor products fail with some probability. it is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all sanyo products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of sanyo electric co. , ltd. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo product that you intend to use. information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. sanyo believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. this catalog provides information as of march, 2005. specifications and information herein are subject to change without notice. ps note on usage : since the MCH6630 is a mosfet product, please avoid using this device in the vicinity of highly charged objects. 0 0 20 40 60 80 100 120 0.2 0.4 0.6 0.8 1.0 140 160 p d -- ta it09246 a s o 2 3 5 7 2 3 5 7 2 5 3 1.0 0.1 0.01 1.0 23 57 0.1 23 57 10 25 3 it09245 operation in this area is limited by r ds (on). 100 m s 100ms 1ms 10ms <10 m s dc operation i dp =2.8a i d =0.7a drain-to-source voltage, v ds -- v drain current, i d -- a ta=25 c single pulse mounted on a ceramic board (900mm 2 5 0.8mm) 1unit ambient temperature, ta -- c allowable power dissipation, p d -- w mounted on a ceramic board (900mm 2 5 0.8mm) 1unit it07520 it07521 r ds (on) -- i d 3 5 7 1.0 2 3 23 57 23 57 0.01 0.1 1.0 ta= 75 c -- 25 c 25 c v gs =2.5v r ds (on) -- i d 5 7 2 3 1.0 5 7 23 57 23 0.01 0.1 v gs =1.5v ta= 75 c -- 25 c 25 c drain current, i d -- a static drain-to-source on-state resistance, r ds (on) -- w drain current, i d -- a static drain-to-source on-state resistance, r ds (on) -- w
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